首页 >2SJ479(L)|2SJ479(S)>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

2SJ479L

SiliconPChannelDV-LMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS(on)=25mΩtyp. •4Vgatedrivedevices. •Highspeedswitching

HitachiHitachi Semiconductor

日立日立公司

2SJ479L

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=25mΩtyp. •4Vgatedrivedevices. •Highspeedswitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ479L-E

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=25mΩtyp. •4Vgatedrivedevices. •Highspeedswitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ479S

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=25mΩtyp. •4Vgatedrivedevices. •Highspeedswitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ479S

SiliconPChannelDV-LMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS(on)=25mΩtyp. •4Vgatedrivedevices. •Highspeedswitching

HitachiHitachi Semiconductor

日立日立公司

2SJ479STL-E

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=25mΩtyp. •4Vgatedrivedevices. •Highspeedswitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格